unisonic technologies co., ltd ut100n03-q power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-625.a 100a, 30v n-channel power mosfet ? description the ut100n03-q uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 5.3m ? @v gs =10 v * r ds(on) = 8.0m ? @v gs =4.5 v ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut100n03l-q-ta3-t UT100N03G-Q-TA3-T to-220 g d s tube ut100n03l-q-tq2-r ut100n03g-q-tq2-r to-263 g d s tape reel ut100n03l-q-tq2-t ut100n03g-q-tq2-t to-263 g d s tube
ut100n03-q power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-625.a ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 100 a pulsed drain current (note 2) i dm 400 a single pulsed avalanche current (note 3) i as 35 a single pulsed avalanche energy (note 3) e as 875 mj 100 w power dissipation derate above 25 p d 0.67 w/ junction temperature t j +175 strong temperature t stg -55 ~ +175 note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by maximum junction temperature 3. l = 0.5mh, i as = 35a, v dd = 25v, r g = 25 ? , starting t j = 25 . ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w junction to case jc 1.5 /w ? electrical characteristics (t j =25 , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics (note2) gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10 v, i d =50 a 3.36 5.3 static drain-source on-resistance r ds(on) v gs =4.5 v, i d =40 a 5.25 8 m ? dynamic parameters (note3) input capacitance c iss 8075 output capacitance c oss 680 reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 255 pf switching parameters (note3) total gate charge q g 42.5 55.25 gate source charge q gs 17.68 gate drain charge q gd v ds =15v, v gs =5v, i d =16a 16.15 nc turn-on delay time t d(on) 25.7 50 turn-on rise time t r 10 20 turn-off delay time t d(off) 128 200 turn-off fall-time t f v dd =15v, i d =1a, r gen =6 ? v gs =10 v 34 70 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =20 a,v gs =0 v 1.5 v drain-source diode forward current i s 90 a note: 1. pulse test : pulse width < 300 s, duty cycle < 2%. 2. guaranteed by design, not subject to production testing.
ut100n03-q power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-625.a ? test circuit and waveform
ut100n03-q power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-625.a ? typical characteristics 50 40 30 20 10 0 01 2 345 4 3 2 1 0 0 20 40 60 80 100 v gs =10,8,6,4v v gs =3v 25 t j =125 -55 output characteristics drain current,i d (a) drain to source voltage,v ds (v) drain current,i d (a) transfer characteristics gate to source voltage,v gs (v) normalized gate-source threshold voltage,v th normalized on-resistance, r ds(on) (ohms) gate to source voltage,v gs (v) c a p a c i t a n c e , c ( p f )
ut100n03-q power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-625.a ? typical characteristics(cont.) drain current,i d (a) source-drain current,i s (a) 10 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 p dm t 1 t 2 square wave pulse duration (sec) normalized thermal transient impedanc curve d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1.r jc (t)=r(t)*r jc 2.r jc =see datasheet 3.t jm -t c =p*r jc (t) 4.duty cycle,d=t 1 /t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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